Pseudopotential calculation of the stacking fault energy in silicon-Reference-Cited by-同舟云学术

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Pseudopotential calculation of the stacking fault energy in silicon

Published:1974-01 Issue:1 Volume:29 Page:1-8
ISSN:0031-8086
Container-title:The Philosophical Magazine: A Journal of Theoretical Experimental and Applied Physics
language:en
Short-container-title:The Philosophical Magazine: A Journal of Theoretical Experimental and Applied Physics

Author:

Chen L. J.¹,Falicov L. M.²

Affiliation:

1. a Department of Physics , University of California, and Inorganic Materials Research Division, Lawrence Berkeley Laboratory , Berkeley , California , U.S.A.

2. b Department of Physics , University of California , Berkeley , California , 94720 , U.S.A.

Publisher

Informa UK Limited

Link

https://www.tandfonline.com/doi/pdf/10.1080/14786437408213549

Reference24 articles.

1. Stacking Fault Energy in Silicon

2. Electronic Structure and Optical Properties ofMg2Si,Mg2Ge, andMg2Sn

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electronic properties of twin boundaries and twinning superlattices in diamond-type and zinc-blende-type semiconductors;Physical Review B;1993-12-15

2. Twinning superlattices;Solid State Communications;1993-06

3. Electronic Structures of Hetero-Crystalline Semiconductor Superlattices;Journal of the Physical Society of Japan;1992-07-15

4. Theoretical study of stacking faults in silicon;Physical Review B;1985-12-15

5. Electronic structure of Si (111) interface between diamond and hexagonal phases;Solid State Communications;1983-07

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