Structure factor of a random stacking sequence
Author:
Publisher
Informa UK Limited
Link
http://www.tandfonline.com/doi/pdf/10.1080/14786437408226607
Reference4 articles.
1. A possible model of amorphous silicon and germanium
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3. X‐Ray Diffraction by Face‐Centered Cubic Crystals with Deformation Faults
4. The structure of amorphous Si and Ge
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Quantum mechanics and mechanical properties: Towards twenty-first century materials;Contemporary Physics;1990-03
2. Scattering intensity of amorphous silicon in a random stacking model;Journal of Physics C: Solid State Physics;1978-12-24
3. Random stacking model applied to tetrahedrally bonded amorphous semiconductors: The scattering intensity;Physical Review B;1977-09-15
4. A random stacking model for tetrahedrally coordinated amorphous semiconductors;Journal of Physics C: Solid State Physics;1977-06-14
5. Amorphous Materials;Electron Microscopy in Mineralogy;1976
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