High pressure electrical resistivity studies on Ga-Te glasses-Reference-Cited by-同舟云学术

High pressure electrical resistivity studies on Ga-Te glasses

Published:1993-05 Issue:4 Volume:11 Page:195-200
ISSN:0895-7959
Container-title:High Pressure Research
language:en
Short-container-title:High Pressure Research

Author:

Prasad M. V. N.,Asokan S.,Parthasarathy G.,Titus S. S. K.,Gopal E. S. R.

Publisher

Informa UK Limited

Subject

Condensed Matter Physics

Link

http://www.tandfonline.com/doi/pdf/10.1080/08957959308201646

Reference21 articles.

1. High-pressure studies on Ge-Te glasses. Evidence for a critical composition in IV-VI chalcogenide glassy systems

2. Evidence for a critical composition in group-IV–VI chalcogenide glasses

3. Mechanical and Chemical Thresholds in IV-VI Chalcogenide Glasses

4. Minomura, S., Aoki, K. and Shimomura, O. 1976.Electronic Phenomena in Non-crystalline Semiconductors, Edited by: Kolomiets, B. T. 289Nauka: Leningrad.

5. Semiconductor-metal and superconducting transitions induced by pressure in amorphousAs2Te3

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1. Unraveling the Atomic Structure of Bulk Binary Ga–Te Glasses with Surprising Nanotectonic Features for Phase-Change Memory Applications;ACS Applied Materials & Interfaces;2021-07-28

2. High-pressure resistivity behavior of As–Te–In glasses – the effect of network topological thresholds;Journal of Non-Crystalline Solids;2002-06

3. Threshold electrical switching in bulk As-Te-In glasses: composition dependence and topological effects;Philosophical Magazine B;2001-06

4. Pressure-induced metallization in AlAsTe glasses;Journal of Non-Crystalline Solids;1995-12