Design of a device for the simultaneous application of uniaxial stress and hydrostatic pressure-Reference-Cited by-同舟云学术

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Design of a device for the simultaneous application of uniaxial stress and hydrostatic pressure

Published:1994-11 Issue:4-6 Volume:12 Page:291-295
ISSN:0895-7959
Container-title:High Pressure Research
language:en
Short-container-title:High Pressure Research

Author:

Meier Markus,Hochheimer Hans D.,Adams Alf,Hor Pei-Herng

Publisher

Informa UK Limited

Subject

Condensed Matter Physics

Link

http://www.tandfonline.com/doi/pdf/10.1080/08957959408201672

Reference9 articles.

1. Adams, A. 1991.“Frontiers of High Pressure Research” NATO AS1 Series B, Edited by: Hochheimer, H. D. and Etters, R. D. Vol. 286, 281New York: Plenum Press.

2. Band-structure engineering for low-threshold high-efficiency semiconductor lasers

3. Effect of uniaxial stress on the superconducting transition inYBa2Cu3O7

4. Wijngaarden, R. J. and Griessen, R. 1989.Studies of High Temperature Superconductors, Edited by: Narlikar, A. V. Vol. 2, 29New York: Nova Science Publishers.

5. High temperature superconductors under pressure: Experimental review and test on the RVB model

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of semiconductor lasers under simultaneous uniaxial stress and hydrostatic pressure;High Pressure Research;2000-09

2. Equation of state of PrBa2Cu3O7-δ;Journal of Physics and Chemistry of Solids;1998-02

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