Surface and depth distribution damage of ions in silicon as seen with an electron microscope
Author:
Affiliation:
1. a Istituto di Fisica, Facoltà di Ingegneria , Università di Roma , Roma, Italy and Gruppo Nazionale Struttura della Materia del C.N.R. of, Italy
Publisher
Informa UK Limited
Subject
General Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/00337577208232578
Reference29 articles.
1. Motion of swift charged particles, as influenced by strings of atoms in crystals
2. Range Measurements in Oriented Tungsten Single Crystals (0.1-1.0 MeV). I. Electronic and Nuclear Stopping Powers
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Random and channeled ion-damage distributions in Zn+implanted GaAs by electron microscopy;Radiation Effects and Defects in Solids;1994-09
2. Orientational dependence of damage in te+implanted germanium single crystals;Radiation Effects;1983-01
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