Simulation of amorphization in silicon lattice
Author:
Affiliation:
1. a Kurchatov Atomic Energy Institute , Moscow , D-182 , U.S.S.R.
Publisher
Informa UK Limited
Subject
General Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/00337577508242052
Reference9 articles.
1. Moss , S. C. and Graczyk , J. F. Proc. Intern. Conf. on the Physics of Semicond. 1970, Cambridge, Mass. pp.658USAEC.
2. Evidence of Voids Within the As-Deposited Structure of Glassy Silicon
3. Electrons in disordered structures
4. Amorphous germanium and silicon
5. The Structure of Amorphous Silicon Films
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1. First-principles simulation of collision cascades in Si to test pair-potentials for Si-Si interaction at 10 eV–5 keV;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-06
2. Interatomic Potentials in Silicon;physica status solidi (b);1991-06-01
3. Molecular dynamics simulations of disorder formed in silicon and germanium by low-energy ion irradiation;Philosophical Magazine Letters;1989-10
4. Molecular dynamics simulation of the coupling between radiation damage and lattice phonons in silicon;Philosophical Magazine A;1989-06
5. Molecular dynamics simulation of the damage formed in silicon at energies near threshold;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1988-06
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