Investigation of point defects in silicon and germanium by non-irradiation techniques
Author:
Publisher
Informa UK Limited
Subject
General Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00337577108242025
Reference37 articles.
1. Diffusion Mechanisms and Point Defects in Silicon and Germanium
2. Kendall, D. L. and De Vries, D. B. 1969.Semiconductor Silicon, Edited by: Haberecht, R. R. 358New York: The Electrochemical Society, Inc.
3. Self‐Diffusion in Intrinsic and Extrinsic Silicon
4. Seeger, A. and Swanson, M. L. 1968.Lattice Defects in Semiconductors, Edited by: Hasiguti, R. R. 93University of Tokyo Press and The Pennsylvania State University Press.
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