Electrical and optical properties of inas and inp compounds irradiated with 50 mev electrons-Reference-Cited by-同舟云学术

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Electrical and optical properties of inas and inp compounds irradiated with 50 mev electrons

Published:1977-01 Issue:1-2 Volume:32 Page:113-119
ISSN:0033-7579
Container-title:Radiation Effects
language:en
Short-container-title:Radiation Effects

Author:

Kekelidze N. P.

Publisher

Informa UK Limited

Subject

General Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00337577708237465

Reference36 articles.

1. Electron Irradiation of Indium Arsenide

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Carriers mobility of InAs- and InP- rich InAs-InP solid solutions irradiated by fast neutrons;AIP Conference Proceedings;2013

2. Raman scattering studies of oxygen implanted CdS thin films prepared by vacuum evaporation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-04

3. Positron annihilation and Hall effect in electron irradiatedn-InP crystals;Applied Physics A Solids and Surfaces;1982-12

4. Positron Annihilation and Electrical Properties of Electron-Irradiated (≈ 2 MeV) InAs Crystals;physica status solidi (a);1982-08-16

5. Radiation defects in electron-irradiated InP crystals;physica status solidi (a);1982-06-16

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