Diffusion effects in ion implanted germanium-Reference-Cited by-同舟云学术

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Diffusion effects in ion implanted germanium

Published:1970-01 Issue:2 Volume:6 Page:257-261
ISSN:0033-7579
Container-title:Radiation Effects
language:en
Short-container-title:Radiation Effects

Author:

Johansson N. G. E.,Sigurd D.,Björkqvist K.

Publisher

Informa UK Limited

Subject

General Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00337577008236304

Reference13 articles.

1. Picraux, S. T., Johansson, N. G. E. and Mayer, J. W. 1969.Semiconductor Silicon, Edited by: Haberecht, R. R. and Kern, E. L. 422New York: Electrochem. Soc. Inc.

2. Gyulai, J., Meyer, O., Pashley, R. D. and Mayer, J. W. this conference

3. Mayer, I. W. and Johansson, N. G. E. unpublished work

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Diffusion and Solubility of Dopants in Germanium;Germanium-Based Technologies;2007

2. Ion implantation damage and annealing in germanium;Journal of Applied Physics;1983-05

3. Ion Induced Morphological Instabilities in Ge;MRS Proceedings;1983

4. Characterization of damage in ion implanted Ge;Applied Physics Letters;1982-10-15

5. Zn‐ion‐implantation profiles in CuInSe2by Auger electron spectroscopy;Journal of Applied Physics;1977-01

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