1. The influence of preamorphization on the properties of shallow p+ n-junctions in silicon radiation detectors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1993-03
2. The Changing Environments of Dopants in Amorphous Silicon at Various Stages of Annealing;MRS Proceedings;1993
3. Environments of ion-implanted dopants in amorphous silicon at various stages of annealing;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-01
4. Ion-implanted Si pn-junction detectors with ultrathin windows;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1990-03
5. Oxygen related mechanism of reverse annealing for boron implants in silicon;Radiation Effects;1984-01