Preferential etching of ion bombarded GaAs-Reference-Cited by-同舟云学术

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Preferential etching of ion bombarded GaAs

Published:1971-06 Issue:3-4 Volume:9 Page:257-260
ISSN:0033-7579
Container-title:Radiation Effects
language:en
Short-container-title:Radiation Effects

Author:

Arnold G. W.,Whan R. E.,Maurin J. K.,Borders J. A.

Publisher

Informa UK Limited

Subject

General Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00337577108231057

Reference16 articles.

1. DEGRADATION OF LUMINESCENCE IN NEUTRON‐IRRADIATED GaAs DIODES

2. Radiative Recombination in Annealed Electron-Irradiated GaAs

3. Arnold, G. W. and Gobeli, G. W. Proceedings of the Santa Fe Conference on Radiation Effects in Semiconductors. Edited by: Vook, F. L. pp.435New York: Plenum Press.

4. Luminescence in Intrinsic and Annealed Electron-Irradiated GaAs:Cd

5. Effects ofCo60Gamma Irradiation on Epitaxial GaAs Laser Diodes

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photoluminescence Study of Cd-Ion Implantedn-GaAs;Japanese Journal of Applied Physics;1976-01

2. Ellipsometric analysis of refractive index profiles produced by ion implantation in silica glass;Journal of Physics D: Applied Physics;1973-06-11

3. Photoluminescence, Optical Absorption, and Cathodoluminescence in Ion Implanted CdS;Ion Implantation in Semiconductors and Other Materials;1973

4. Enhanced Diffusion in Ion-Bombarded GaAs;Ion Implantation in Semiconductors;1971

5. Anomalous Diffusion of Defects in Ion-Implanted GaAs;Ion Implantation in Semiconductors;1971

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