X-ray and rutherford backscattering yields from channeled helium ions in GaAs-Reference-Cited by-同舟云学术

X-ray and rutherford backscattering yields from channeled helium ions in GaAs

Author:

Price P. B.¹²,Gadeken L. L.¹³,Mak H.-B.¹,Ewan G. T.¹

Affiliation:

1. a Department of Physics , Queen's University , Kingston , Ontario , Canada , K7L 3N6

2. b Redridge Mail Service No. 315. Via Childers , Queensland , 4660 , Australia

3. c Schlumberger-Doll Research Center , Ridgefield , Connecticut , 06877 , U.S.A.

Publisher

Informa UK Limited

Subject

General Engineering

Link

Reference19 articles.

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2. Study of the oxygen behaviour in thermally treated Czochralski silicon by combining CPAA with ion channeling;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-09

3. Determination of lattice displacements in 2 MeV Se+ implanted GaAs by RBS and PIXE channeling experiments;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-09

4. Defect development and dopant location due to elevated temperature implantation of InP with MeV zinc ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-06

5. Lattice location of B atoms in Ni0.75Al0.15Ti0.10 intermetallic compounds as observed by the channeling method;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1990-01