The spatial distribution of ions implanted into solids subject to diffusion and surface sputtering-Reference-Cited by-同舟云学术

The spatial distribution of ions implanted into solids subject to diffusion and surface sputtering

Author:

Collins R.¹,Carter G.²

Affiliation:

1. a Department of Mathematics , University of Salford , Salford , M5 4WT , Lancashire , U.K.

2. b Department of Electrical Engineering , University of Salford , Salford , M5 4WT , Lancashire , U.K.

Publisher

Informa UK Limited

Subject

General Engineering

Link

Reference8 articles.

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2. Steady-state damage profiles due to reactive ion etching and ion-assisted etching;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1995-03

4. A study of enhanced diffusion during high dose high flux pulsed metal ion implantation into steel and aluminium;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-04

5. Elevated-temperature implantations of Au into Zr;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-07