The use of dissolution curves to determine amorphization depths and damage ranges in silicon-Reference-Cited by-同舟云学术

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The use of dissolution curves to determine amorphization depths and damage ranges in silicon

Published:1973-01 Issue:3-4 Volume:17 Page:253-260
ISSN:0033-7579
Container-title:Radiation Effects
language:en
Short-container-title:Radiation Effects

Author:

Reid Ian,Kelly Roger

Publisher

Informa UK Limited

Subject

General Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00337577308232622

Reference40 articles.

1. On the amorphizatxon of Si and WO3by particle impact

2. Depth Profiles of the Lattice Disorder Resulting from Ion Bombardment of Silicon Single Crystals

3. PRODUCTION AND ANNEALING OF LATTICE DISORDER IN SILICON BY 200‐keV BORON IONS

4. ESR AND OPTICAL ABSORPTION STUDIES OF ION‐IMPLANTED SILICON

5. Damage produced by ion mplantation in silicon

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Chemical modifications induced by ion implantation in glasses;Modifications Induced by Irradiation in Glasses;1992

2. High-Fluence Implantation in Insulators. Part II: Chemical Changes;Materials Modification by High-fluence Ion Beams;1989

3. Effects of ion implantation on the dissolution properties of materials and its suitability for simulating internal irradiation due to α-decay;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1984-02

4. Ion-beam modification of SnO2: Predictions and observations;Nuclear Instruments and Methods in Physics Research;1983-05

5. Preferential oxygen sputtering from Nb2O5;Thin Solid Films;1976-04

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