Depth dependence of angular dips: Measurements and calculations for H+and D+in Si and Ge

Author:

Campisano S. U.,Foti G.,Grasso F.,Quercia I. F.,Rimini E.

Publisher

Informa UK Limited

Subject

General Engineering

Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. REFERENCES;Kinetics and Thermodynamics of Fast Particles in Solids;2012-11-09

2. Tellurium in silicon;Radiation Effects;1983-01

3. An instrument for lattice location studies of light impurity atoms by means of (n, α)-reactions;Nuclear Instruments and Methods in Physics Research;1981-09

4. Temperature dependence of critical angles for axial channeling: Protons in MgO;Physics Letters A;1979-10

5. Measurement of compound nuclear lifetimes by the crystal blocking technique;Nuclear Physics A;1977-03

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