Author:
Bontemps A.,Ligeon E.,Fontenille J.
Cited by
7 articles.
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1. Exfoliation of GaAs caused by MeV1H and 4He ion implantation at 〈100〉, 〈110〉 axial and random orientations;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-11
2. Ranges of 1.0–2.7 MeV 1H and 4He ions in GaAs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-07
3. Diffusion and lattice location of lithium in zinc telluride;Journal of Physics and Chemistry of Solids;1980-01
4. Molecular beam epitaxial ZnTe thin films;Electrical Engineering in Japan;1977
5. Stopping power and straggling of1H and4He in ZnTe and CdTe;Radiation Effects;1977-01