Annealing of γ-ray irradiated lithium compensatedp-type silicon-Reference-Cited by-同舟云学术

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Annealing of γ-ray irradiated lithium compensatedp-type silicon

Published:1971-05 Issue:1-2 Volume:9 Page:93-97
ISSN:0033-7579
Container-title:Radiation Effects
language:en
Short-container-title:Radiation Effects

Author:

Urli N. B.

Publisher

Informa UK Limited

Subject

General Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00337577108242039

Reference16 articles.

1. Vavilov, V. S. Proc. 7th Intern. Conf. Phys. Semicond. pp.115Paris: Dunod.

2. Gamma Irradiation of Silicon. III. Levels in p‐Type Material

3. Nakashima, K. and Inuishi, Y. 1968. Radiation Effects in Semiconductors. Proc. Santa Fe Conf., 1967. 1968, New York. pp.162

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electron irradiation-induced defects in lithium doped n-type silicon with different oxygen concentrations;Physics Letters A;1988-05

2. Cell performance and defect behavior in proton‐irradiated lithium‐counterdoped n+p silicon solar cells;Journal of Applied Physics;1986-09-15

3. Electron induced degradation and recovery under space conditions of lithium-doped silicon solar cells;Radiation Effects;1984-01

4. Study of lithium-boron pairs in neutron irradiated silicon;Radiation Effects;1976-01

5. Optical study of lithium‐defect complexes in irradiated silicon;Journal of Applied Physics;1973-06

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