Location of diffusion-doped gold atoms in silicon by means of channeling
Author:
Affiliation:
1. a Department of Nuclear Engineering , Nagoya University , Nagoya , Japan
2. b Electrical Communication Laboratory , Nippon Telegraph and Telephone Public Corporation , Tokyo , Japan
Publisher
Informa UK Limited
Subject
General Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/00337577208231200
Reference9 articles.
1. The use of channeling-effect techniques to locate interstitial foreign atoms in silicon
2. Anomalously high yields of elastically scattered12C-ions from Zr, Hf, Tl, and Hg atoms implanted into silicon
3. Gold‐Induced Climb of Dislocations in Silicon
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1. BIBLIOGRAPHY;Materials Analysis by Ion Channeling;1982
2. Enhanced diffusion mechanisms;Radiation Effects;1978-01
3. Angular dependence of the backscattering yield from Si crystals in double and single alignment;Radiation Effects;1976-01
4. Equilibrium positions of Au atoms in Sn crystals as determined by a channeling technique;Physical Review B;1975-02-01
5. Use of the channeling technique and calculated angular distributions to locate Br implanted into Fe single crystals;Physical Review B;1974-04-01
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