Validity of the continuum approximation in calculating the scattering yields for atom location
Author:
Publisher
Informa UK Limited
Subject
General Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00337577608234779
Reference25 articles.
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2. Location of impurities in alkali halide crystals by channeling studies
3. The interaction of channeled ions with foreign atoms in crystals
4. Anomalously high yields of elastically scattered12C-ions from Zr, Hf, Tl, and Hg atoms implanted into silicon
5. The use of channeling-effect techniques to locate interstitial foreign atoms in silicon
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1. Transmission ion channeling facility for structural studies of monolayer films on clean semiconductor surfaces;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1993-05
2. Theory of charged particle scattering in crystals by the generalized optical potential method;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-06
3. Analytical description of yields from resonant nuclear reactions induced by channeled particles using a statistical approach;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1988-06
4. Study of crystal defects using ion channelling and channelling radiation;Bulletin of Materials Science;1988-03
5. Materials Research with Channeling Combined with RBS, NRA and PIXE;Nuclear Physics Applications on Materials Science;1988
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