1. Flux effects on damage in GaAs as measured by the channelling of 85Kr
2. Low temperature channeling measurements of ion implantation lattice disorder in GaAs†
3. Eisen, F. H. and Welch, B. European Conference on Ion Implantation. pp.227England: Peter Peregrinus Ltd.
4. Whitton, J. L. and Carter, G. 1970.Atomic Collision Phenomena in Solids, Edited by: Palmer, D. W., Thompson, M. W. and Townsend, P. D. 615North-Holland Publishing Company.