Voids in ion-implanted silicon-Reference-Cited by-同舟云学术

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Voids in ion-implanted silicon

Published:1978-01 Issue:1-2 Volume:37 Page:121-126
ISSN:0033-7579
Container-title:Radiation Effects
language:en
Short-container-title:Radiation Effects

Author:

Romanov S. I.,Smirnov L. S.

Publisher

Informa UK Limited

Subject

General Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00337577808242095

Reference43 articles.

1. Watkins, G. D. 1975.Lattice Defects in Semiconductors 1974, Conf. Series No. 23 (Institute of Physics 1London and Bristol p.

2. Lattice location and atomic mobility of implanted boron in silicon

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4. The optically active process of higher-order bands in neutron-irradiated silicon;Journal of Physics: Condensed Matter;1994-10-10

5. Optical studies of infrared active electronic defects in neutron irradiated silicon after annealing at 450°C;Physica Status Solidi (a);1994-07-16

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