On Ve-Degree and Ev-Degree Based Topological Properties of Silicon Carbide Si2C3-II[p, q]-Reference-Cited by-同舟云学术

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On Ve-Degree and Ev-Degree Based Topological Properties of Silicon Carbide Si2C3-II[p, q]

Published:2020-04-09 Issue:2 Volume:42 Page:593-607
ISSN:1040-6638
Container-title:Polycyclic Aromatic Compounds
language:en
Short-container-title:Polycyclic Aromatic Compounds

Author:

Cai Zheng-Qun¹^ORCID,Rauf Abdul²^ORCID,Ishtiaq Muhammad²^ORCID,Siddiqui Muhammad Kamran³^ORCID

Affiliation:

1. School of Foreign Studies, Anhui Jianzhu University, Hefei, PR China

2. Department of Computer Science and Engineering, Air University Multan Campus, Multan, Pakistan

3. Department of Mathematics, Comsats University Islamabad, Lahore Campus, Lahore, Pakistan

Publisher

Informa UK Limited

Subject

Materials Chemistry,Organic Chemistry,Polymers and Plastics

Link

https://www.tandfonline.com/doi/pdf/10.1080/10406638.2020.1747095

Reference40 articles.

1. QSPR Analysis of Certain Graph Theocratical Matrices and Their Corresponding Energy

2. Computing Zagreb Indices and Zagreb Polynomials for Symmetrical Nanotubes

3. On the Maximum ABC Index of Graphs With Prescribed Size and Without Pendent Vertices

4. On the maximum ABC index of graphs without pendent vertices

5. The Bounds of Vertex Padmakar–Ivan Index on k-Trees

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2. Neighborhood degree sum-based molecular indices and their comparative analysis of some silicon carbide networks;Physica Scripta;2024-04-10

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4. Structure-property modeling for thermodynamic properties of benzenoid hydrocarbons by temperature-based topological indices;Ain Shams Engineering Journal;2024-03

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