LXXIV. Internal barriers in semi-conductors-Reference-Cited by-同舟云学术

LXXIV. Internal barriers in semi-conductors

Published:1951-07 Issue:330 Volume:42 Page:734-738
ISSN:1941-5982
Container-title:The London, Edinburgh, and Dublin Philosophical Magazine and Journal of Science
language:en
Short-container-title:The London, Edinburgh, and Dublin Philosophical Magazine and Journal of Science

Author:

Henisch H.K.

Publisher

Informa UK Limited

Link

http://www.tandfonline.com/doi/pdf/10.1080/14786445108561301

Reference7 articles.

1. High-Frequency Characteristics of Lead Sulphide and Lead Selenide Layers

2. Miller , P.H. 1950.Proceedings of the Conference on the Properties of Semi-Conducting Materials, 172–172. Butterworths: University of Reading. 1951

3. Mott , N.F. 1950.Proceedings of the Conference of the Properties of Semi-Conducting Materials, 1–1. Butterworths: University of Reading. 1951

4. Seitz , F. 1950.Proceedings of the Conference on the Properties of Semi-Conducting Materials, 8–8. Butterworths: University of Reading. 1951

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1. The electrical conductivity of semi-conductors involving inclusions of another phase;Journal of Physics and Chemistry of Solids;1972-01

2. Frequency dependence of the activation energy for the conductivity in a ferrite;Soviet Physics Journal;1970-02

3. A note on the electrical conductivity in ferrites at low temperatures;Czechoslovak Journal of Physics;1963-06

4. Electrical Properties of NiO;Physical Review;1954-03-15

5. Zum Energieumsatz bei Licht- oder Elektronenbestrahlung d�nner Zinkoxyd-Schichten;Zeitschrift f�r Physik;1952-06