Noise models for gallium arsenide field-effect transistors at room and cryogenic temperatures
Author:
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00207218608920885
Reference13 articles.
1. Noise behavior of GaAs field-effect transistors with short gate lengths
2. A Rapidly Convergent Descent Method for Minimization
3. Determination of the Basic Device Parameters of a GaAs MESFET
4. Design of Microwave GaAs MESFET's for Broad-Band Low-Noise Amplifiers
5. Optimal noise figure of microwave GaAs MESFET's
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Low-frequency excess noise in large GaAs heterostructures-temperature and frequency dependence;Semiconductor Science and Technology;1988-12-01
2. Optimum noise source impedance determination for GaAs FETs at room and cryogenic temperatures;International Journal of Electronics;1987-09
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