Interface recombination velocity of the minority carriers in optically excited n-type GaAs
Author:
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00207218408938947
Reference8 articles.
1. Doping dependence of the internal quantum efficiency of spontaneous electron-hole recombination in n-type samples of GaAs excited by a 30 kV electron beam at 300 °K
2. Photon loss in the active and passive regions of a semiconductor laser
3. Optical Properties of n‐Type GaAs. I. Determination of Hole Diffusion Length from Optical Absorption and Photoluminescence Measurements
4. A Contribution to the Recombination Statistics of Excess Carriers in Semiconductors
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