Monte Carlo simulation for predicting neutron-induced single-event upset in ferroelectric random access memory-Reference-Cited by-同舟云学术

Monte Carlo simulation for predicting neutron-induced single-event upset in ferroelectric random access memory

Author:

Zhang Hong¹²,Huang Jing²,Guo Hong Xia¹²,Lei Zhi Feng³,Li Bo¹⁴

Affiliation:

1. State Key Laboratory of Intense Pulsed Radiation Simulation and Effect (Northwest Institute of Nuclear Technology), Xi’an, China

2. School of Materials and Engineering, Xiangtan University, Hunan, Xiangtan, China

3. Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory, CEPREI, Guangzhou, China

4. Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, P. R. China

Funder

State Key Laboratory of Intense Pulsed Radiation Simulation and Effect

Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory

National Natural Science Foundation of China

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

Reference28 articles.

1. A. Driskill-Smith et al., 2010 Symposium on VLSI Technology, 2010, 249–252.

3. B. A. Dahl et al., 2015 IEEE Radiation Effects Data Workshop (REDW), 2015, 161–166.