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Metallization systems for ohmic contacts to p- and n-type GaAs

  • Published:1979-11 Issue:5 Volume:47 Page:459-467
  • ISSN:0020-7217
  • Container-title:International Journal of Electronics
  • language:en
  • Short-container-title:International Journal of Electronics

Author:

GUPTA R. P.,FREYER J.

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering

Reference25 articles.

1. BURGER , H. H. , 1960 , International Solid State Circuit, Conference Digest, of Technical Papers , p. l60 ; 1972,j. electrochem, Soc, 119, 507 .

2. A study of the contacts of a diffused resistor

3. Ohmic contacts for GaAs devices

4. Specific contact resistance of ohmic contacts to gallium arsenide

Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Development of refractory ohmic contact materials for gallium arsenide compound semiconductors;Science and Technology of Advanced Materials;2002-01

2. Metal contacts to gallium arsenide;Journal of Electronic Materials;1996-11

3. Alternative ohmic contact systems to n-InP;Applied Surface Science;1993-06

4. Ruthenium and ruthenium-based contacts to GaAs;Applied Surface Science;1993-06

5. Comparison between ruthenium‐based and other ohmic contact systems top‐type GaAs;Applied Physics Letters;1992-10-19
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