Higher-order breakdown in epitaxial P+N/N+junctions-Reference-Cited by-同舟云学术

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Higher-order breakdown in epitaxial P+N/N+junctions

Published:1975-07 Issue:1 Volume:39 Page:105-112
ISSN:0020-7217
Container-title:International Journal of Electronics
language:en
Short-container-title:International Journal of Electronics

Author:

AHARONI H.

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00207217508920469

Reference3 articles.

1. AHRONI , H. , 1974 ,Proceedings of the First Symposium of the Joint Chapter of Microwaves, Antennes, and Electron Devices (G-AP/E.D./M.T.T.) I.E.E.E., Israel , 2–3 April , pp. 35 – 45 .

2. AHARONI , H. , and BAR-LEV , A. , 1971 ,Proceedings 7th National Convention I.E.E.E., Israel , April , p. 83 .

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A model of the temperature-dependent operation of a MOSFET;SIMULATION;1980-01

2. Arc-back current in convertor systems: theory and experiment;Proceedings of the Institution of Electrical Engineers;1979

3. Simulation of semiconductor devices;SIMULATION;1977-08

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