Some studies on the instability in MOS devices due to water vapour contamination-Reference-Cited by-同舟云学术

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Some studies on the instability in MOS devices due to water vapour contamination

Published:1976-09 Issue:3 Volume:41 Page:273-283
ISSN:0020-7217
Container-title:International Journal of Electronics
language:en
Short-container-title:International Journal of Electronics

Author:

SINGH B. R.,TYAGI B. D.,MARATHE B. R.

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00207217608920635

Reference20 articles.

1. Dielectric relaxation in thermally grown SiO2films

2. CARLSON , H. G. , FULLER , C. R. , OSBORNE , J. R. and BROWN , G. A. , 1966 , presented at the Electrochemical Soc. Meeting. Philadelphia , Abstract 177.

3. Static Fatigue of Glass. I

4. GREGOR , L. V. , 1966 , presented at the Electrochem. Soc. Meeting , Cleveland , Ohio , Abstract 12.

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Charge motion in silicon metal/oxide/semiconductor structures: II;Thin Solid Films;1982-08

2. Electrical Behaviour of Hydrogen Ions in SiO2 Films on Silicon;Insulating Films on Semiconductors;1981

3. Charge motion in silicon MOS structures;Thin Solid Films;1980-07

4. The Role of Hydrogen in SiO2 Films on Silicon;Journal of The Electrochemical Society;1979-01-01

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