A photoconductivity decay model applied to silver-doped silicon†-Reference-Cited by-同舟云学术

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A photoconductivity decay model applied to silver-doped silicon†

Published:1971-03 Issue:3 Volume:30 Page:255-264
ISSN:0020-7217
Container-title:International Journal of Electronics
language:en
Short-container-title:International Journal of Electronics

Author:

SMITH P. C.,MILNES A. G.

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00207217108900317

Reference4 articles.

1. Statistics of the Recombinations of Holes and Electrons

2. SMITH , P. C. , and MILNES , A. G. , 1970 , Ex. Abstr. , Atlantic City Meeting of the Electrochemical Society .

3. Electronic Properties of Silicon Doped with Silver

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Silver related deep levels in silicon;Physica Status Solidi (a);1988-09-16

2. Electronic structure of copper, silver, and gold impurities in silicon;Physical Review B;1985-07-15

3. Energy Levels in Silicon;Annual Review of Materials Science;1980-08

4. Photoionization cross-sections and energy levels of gold, iron, platinum, silver, and titanium in silicon;Journal of Electronic Materials;1979-07

5. Thermally stimulated current measurements applied to silver-doped silicon†;International Journal of Electronics;1972-06

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