Dielectric breakdown properties in silicon dioxide films-Reference-Cited by-同舟云学术

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Dielectric breakdown properties in silicon dioxide films

Published:1976-07 Issue:1 Volume:41 Page:99-104
ISSN:0020-7217
Container-title:International Journal of Electronics
language:en
Short-container-title:International Journal of Electronics

Author:

RAI B. P.,SINGH K.,SRIVASTAVA R. S.

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00207217608920617

Reference14 articles.

1. Dielectric relaxation in thermally grown SiO2films

2. Application of Triangular Voltage Sweep Method to Mobile Charge Studies in MOS Structures

3. Effects of Material and Processing Parameters on the Dielectric Strength of Thermally Grown SiO[sub 2] Films

4. Characteristics of the Surface-State Charge (Qss) of Thermally Oxidized Silicon

5. Dielectric breakdown induced by sodium in MOS structures

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Breakdown in silicon oxide−A review;Journal of Vacuum Science and Technology;1977-09

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