Improved large-signal GaN HEMT model suitable for intermodulation distortion analysis-Reference-Cited by-同舟云学术

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Improved large-signal GaN HEMT model suitable for intermodulation distortion analysis

Published:2011-12 Issue:12 Volume:98 Page:1673-1685
ISSN:0020-7217
Container-title:International Journal of Electronics
language:en
Short-container-title:International Journal of Electronics

Author:

Liu Lin-Sheng,Luo Ji

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00207217.2011.609976

Reference23 articles.

1. Accent Optical Technologies Inc. (2001),DIVA User Manual, Bend, OR: Accent Optical Technologies Inc

2. Agilent Technologies (2005), ‘ADS. ver. ADS2005A’, Santa Clara, CA: Agilent Technologies, documentation: nonlinear devices

3. Extensions of the Chalmers nonlinear HEMT and MESFET model

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An improved empirical nonlinear model for InP-based HEMTs;Solid-State Electronics;2020-02

2. Performance analysis of FET microwave devices by use of extended spectral-element time-domain method;International Journal of Electronics;2013-05

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