Photovolatic effects in Doped-Bi4Ge3O12crystals in impurity-induced absorption region
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://www.tandfonline.com/doi/pdf/10.1080/00150199208009094
Reference10 articles.
1. The possible mechanism for the bulk photovoltaic effect and optical damage in ferroelectrics
2. Bi_4Ge_3O_12:Cr: a new photorefractive material
3. Refractive indices and electro‐optic coefficients of the eulitities Bi4Ge3O12and Bi4Si3O12
4. High‐voltage bulk photovoltaic effect and the photorefractive process in LiNbO3
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Luminescence and dose-rate response properties of Pr-doped Bi4Ge3O12 scintillators;Radiation Measurements;2022-06
2. Optical Transitions in Cr Doped Bi 4 Ge 3 O 12 Crystal;Chinese Physics Letters;1994-06
3. Doping effect and mechanism of radiation damage of bismuth germanate (Bi4Ge3O12) crystals;Ferroelectrics;1994-01
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