Current-induced defect conductivity in hydrogenated silicon-rich amorphous silicon nitride
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics
Link
http://www.tandfonline.com/doi/pdf/10.1080/09500839508242470
Reference20 articles.
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5. Metal-semiconductor transition in electroformed chromium/amorphous silicon/vanadium thin-film structures
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2. Effect of ion bombardment and annealing on the electrical properties of hydrogenated amorphous silicon metal–semiconductor–metal structures;Journal of Applied Physics;2005-01-15
3. Generation and annealing kinetics of current induced metastable defects in amorphous silicon alloys;Journal of Non-Crystalline Solids;2000-05
4. Hole transport via dangling-bond states in amorphous hydrogenated silicon nitride;Journal of Applied Physics;1999-08
5. Changes in the Poole–Frenkel coefficient with current induced defect band conductivity of hydrogenated amorphous silicon nitride;Journal of Non-Crystalline Solids;1998-05
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