The effects of sulphur incorporation on the optoelectronic properties of hydrogenated amorphous germanium
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics
Link
http://www.tandfonline.com/doi/pdf/10.1080/09500839508241280
Reference19 articles.
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5. Drüsedau, T., Annen, A. and Schröder, B. 1993.Amorphous Silicon Technology, Materials Research Society Symposium Proceedings Vol. 297, 717Pittsburgh, Pennsylvania: Materials Research Society.
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1. Gas-phase reactions of XH3+(X = C, Si, Ge) with NF3: a comparative investigation on the detailed mechanistic aspects;Journal of Mass Spectrometry;2009-09
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3. Ion chemistry in germane/fluorocompounds gaseous mixtures: a mass spectrometric and theoretical study;Journal of Mass Spectrometry;2008-10
4. Plasma deposited non-stoichiometric hydrogenated germanium sulfide a-Ge1−xSx:H (x < 0.3);Journal of Non-Crystalline Solids;1996-05
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