Phase-field simulation of magnetic double-hole nanoring and its application in random storage-Reference-Cited by-同舟云学术

Phase-field simulation of magnetic double-hole nanoring and its application in random storage

Published:2021-03-29 Issue: Volume: Page:1-28
ISSN:1947-5411
Container-title:International Journal of Smart and Nano Materials
language:en
Short-container-title:International Journal of Smart and Nano Materials

Author:

Lv Zengyao¹,Zhang Xiaoyu²,Zhang Honglong³,Zhou Zhitao²,Xu Duo²,Pei Yongmao²

Affiliation:

1. Department of Engineering Mechanics; Center for Flexible Electronics Technology, Applied Mechanics Laboratory, Tsinghua University, Beijing 100084, P. R. China

2. State Key Laboratory for Turbulence and Complex Systems, Department of Mechanics and Engineering Science, College of Engineering, Peking University, Beijing 100871, P. R. China

3. College of Civil Engineering and Transportation, South China University of Technology, Guangzhou, P. R. China

Funder

National Natural Science Foundation of China

Publisher

Informa UK Limited

Subject

General Materials Science,Civil and Structural Engineering,Mechanics of Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/19475411.2021.1901791

Reference33 articles.

1. Ultrahigh density vertical magnetoresistive random access memory (invited)

2. Magnetic switching of single vortex permalloy elements

3. Observation of a Bi-Domain State and Nucleation Free Switching in Mesoscopic Ring Magnets

4. Magnetization reversal in nanostructured permalloy rings

5. Magnetization reversal in individual micrometer-sized polycrystalline Permalloy rings

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