Characteristics of ZrO 2 Thin Films by Atomic Layer Deposition for Alternative Gate Dielectric Applications-Reference-Cited by-同舟云学术

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Characteristics of ZrO 2 Thin Films by Atomic Layer Deposition for Alternative Gate Dielectric Applications

Published:2002-01 Issue:1 Volume:48 Page:23-32
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Park Juwhan¹,Choi Bongsik¹,Park Nohhon¹,Shin Hyun-Jung¹,Lee Jae-Gab¹,Kim Jiyoung¹

Affiliation:

1. a Dept. of Materials Engineering , Kookmin University , Seoul , Korea

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/713718334

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends;Journal of Applied Physics;2013-01-14

2. A novel thermally-stable zirconium amidinate ALD precursor for ZrO2 thin films;Microelectronic Engineering;2009-03

3. Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process;Journal of Applied Physics;2005-06-15

4. Fabrication of Oxide/Semiconducting Coaxial Nanotubular Materials Using Atomic Layer Deposition;Materials Science Forum;2004-03

5. Effects of Various Oxidizers on the ZrO2 Thin Films Deposited by Atomic Layer Deposition;Integrated Ferroelectrics;2004-01

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