Local structure of technologically modified g-GeS2: resonant Raman and absorption edge spectroscopy combined withab initiocalculations-Reference-Cited by-同舟云学术

Local structure of technologically modified g-GeS2: resonant Raman and absorption edge spectroscopy combined withab initiocalculations

Published:2005-09 Issue:25 Volume:85 Page:2947-2960
ISSN:1478-6435
Container-title:Philosophical Magazine
language:en
Short-container-title:Philosophical Magazine

Author:

Holomb * R.,Johansson P.,Mitsa V.,Rosola I.

Publisher

Informa UK Limited

Subject

Condensed Matter Physics

Link

http://www.tandfonline.com/doi/pdf/10.1080/14786430500156112

Reference36 articles.

1. Gaskell PHProceedings of the Sixth International Conference on the structure of Non-Crystalline Materials (NCM6)Prague, Czech Republic, edited by L. Cervinka, A.C. Wright Netherlands North-Holland 1995 p. 9

2. Fekeshgazi I May K Mitsa V Vakaruk APhysics and Applications of Non-Crystalline Semiconductors in Optoelectronicsedited by A. Andriesh, M. BertolottiKluwer Academic PublishersDordrecht/Boston/London 1997 36 p. 243

3. Silver sulfide based glasses (I). Glass forming regions, structure and ionic conduction of glasses in GeS2Ag2S and GeS2Ag2SAgI systems

4. Structure of GeSsub2glass: Spectroscopic evidence for broken chemical order

5. Temperature and Pressure Dependence of Raman Scattering in Amorphous GeS2

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