High-resolution identification of ½⟨110⟩ stacking faults in epitaxial Ba0.3Sr0.7TiO3thin films
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics
Link
http://www.tandfonline.com/doi/pdf/10.1080/1478643031000081284
Reference35 articles.
1. On the origin of stacking faults at the GaAs/ZnSe heterointerface
2. Effects of electron irradiation of barium titanate
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4. Multimode quantitative scanning microwave microscopy of in situ grown epitaxial Ba1−xSrxTiO3 composition spreads
5. Influence of strain on microwave dielectric properties of (Ba,Sr)TiO3 thin films
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1. High density of stacking faults strengthened TaN/TiN multilayer;Acta Materialia;2023-08
2. First-principles study of the atomic and electronic properties of (1 0 0) stacking faults in BaSnO3 crystal;Chemical Physics Letters;2018-02
3. Atomic mapping of Ruddlesden-Popper faults in transparent conducting BaSnO3-based thin films;Scientific Reports;2015-11-03
4. Interfacial dislocations in (111) oriented (Ba0.7Sr0.3)TiO3films on SrTiO3single crystal;Applied Physics Letters;2015-10-05
5. Interface structures and strain relaxation mechanisms of ferroelectric BaTiO3/SrTiO3 multilayers on (001) MgO substrates;Journal of Crystal Growth;2013-11
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