Strain effect in the problem of critical thickness for ferroelectric memory
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics
Link
http://www.tandfonline.com/doi/pdf/10.1080/14786430903250801
Reference15 articles.
1. Critical thickness for ferroelectricity in perovskite ultrathin films
2. Ferroelectricity and Tetragonality in UltrathinPbTiO3Films
3. Ferroelectricity in ultrathin perovskite films
4. Ferroelectricity in Asymmetric Metal-Ferroelectric-Metal Heterostructures: A Combined First-Principles–Phenomenological Approach
5. Elastic Stabilization of a Single-Domain Ferroelectric State in Nanoscale Capacitors and Tunnel Junctions
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2. Ferroelectric phase transition of BaTiO 3 single crystal based on a tenth order Landau-Devonshire potential;Computational Materials Science;2017-07
3. The effect of strain on the domain switching of ferroelectric polycrystals;Journal of Applied Physics;2015-02-21
4. Effects of anisotropic elasticity in the problem of domain formation and stability of monodomain state in ferroelectric films;Physical Review B;2011-07-01
5. Improper ferroelectricity in lawsonite CaAl2Si2O7(OH)2·H2O: hysteresis and hydrogen ordering;Journal of Physics: Condensed Matter;2011-05-16
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