Light-induced defect creation in hydrogenated polymorphous silicon during repeated cycles of illumination and annealing
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics
Link
http://www.tandfonline.com/doi/pdf/10.1080/14786430500157037
Reference22 articles.
1. Metastability studies in silicon thin films: from short range ordered to medium and long range ordered materials
2. Evolution with light-soaking of polymorphous material prepared at 423 K
3. Growth and optoelectronic properties of polymorphous silicon thin films
4. Structural, optical, and electronic properties of hydrogenated polymorphous silicon films deposited from silane–hydrogen and silane–helium mixtures
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1. Hydrogenated Microcrystalline Silicon;Light-Induced Defects in Semiconductors;2014-09-13
2. Stretched exponential relaxation processes in hydrogenated amorphous and polymorphous silicon;physica status solidi (c);2011-05-19
3. The kinetics of light-induced defect creation in hydrogenated polymorphous silicon - stretched exponential relaxation;physica status solidi (c);2010-01-15
4. Thermal annealing effects of dangling bonds in hydrogenated polymorphous silicon;Journal of Applied Physics;2008-09
5. Dispersive processes of light-induced defect creation in hydrogenated amorphous silicon;Solid State Communications;2007-04
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