Optoelectronic Noise and Photocurrent Measurement on GaAs/AlGaAs Laser Diode with Single Quantum Well-Reference-Cited by-同舟云学术

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Optoelectronic Noise and Photocurrent Measurement on GaAs/AlGaAs Laser Diode with Single Quantum Well

Published:2007-03-30 Issue:1 Volume:1 Page:73-80
ISSN:1559-9612
Container-title:International Journal of Optomechatronics
language:en
Short-container-title:International Journal of Optomechatronics

Author:

Grmela Lubomír,Dobis Pavel,Brüstlová Jitka,Tománek Pavel

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Instrumentation

Link

http://www.tandfonline.com/doi/pdf/10.1080/15599610701283377

Reference11 articles.

1. Thickness measurement of thin dielectric films by evanescent total reflection fluorescence

2. Near-field imaging of the photocurrent on a patterned Au/GaAs interface with various wavelengths and bias

3. Nano-Optics

4. Kozlowska , A. , A. Maląg , R. Pomarenke , J. Renard , and Ch. Lienau . 2006 . Near-field spectroscopic analysis of the mode structure in high-power diode lasers based on a double barrier separate confinement heterostructure . Proc. SPIE 6368:63680X .

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optics of nano-objects;SPIE Proceedings;2008-05-12

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