Transient Hydride Generation during III-V Semiconductor Processing-Reference-Cited by-同舟云学术

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Transient Hydride Generation during III-V Semiconductor Processing

Published:1992-06 Issue:6 Volume:7 Page:375-384
ISSN:1047-322X
Container-title:Applied Occupational and Environmental Hygiene
language:en
Short-container-title:Applied Occupational and Environmental Hygiene

Author:

Mosovsky John A.,Rainer David,Asom Moses T.,Quinn William E.

Publisher

Informa UK Limited

Subject

Public Health, Environmental and Occupational Health

Link

http://www.tandfonline.com/doi/pdf/10.1080/1047322X.1992.10390175

Reference39 articles.

1. Progress in Gallium Arsenide Semiconductors

2. American Conference of Governmental Industrial Hygienists. Documentation of the Threshold Limit Values and Biological Exposure Indices, 5th ed. pp.37Cincinnati, OH: ACGIH.

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Etching of III-V Materials Determined by ICP-MS with Sub-Nanometer Precision;ECS Journal of Solid State Science and Technology;2013-12-31

2. Use of and Occupational Exposure to Indium in the United States;Journal of Occupational and Environmental Hygiene;2013-12

3. Fundamental Investigation of Chemical Mechanical Polishing of GaAs in Silica Dispersions: Material Removal and Arsenic Trihydride Formation Pathways;ECS Journal of Solid State Science and Technology;2013

4. Wet Chemical Etching of InP for Cleaning Applications;ECS Journal of Solid State Science and Technology;2013

5. Industrial Hygiene;Semiconductor Safety Handbook;1998

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