Lowering Dislocation Density of Directionally Grown Multicrystalline Silicon Ingots for Solar Cells by Simplifying Their Post-Solidification Processes—A Simulation Approach-Reference-Cited by-同舟云学术

Lowering Dislocation Density of Directionally Grown Multicrystalline Silicon Ingots for Solar Cells by Simplifying Their Post-Solidification Processes—A Simulation Approach

Published:2014-12-13 Issue:2 Volume:38 Page:146-155
ISSN:0149-5739
Container-title:Journal of Thermal Stresses
language:en
Short-container-title:Journal of Thermal Stresses

Author:

Zhou Naigen,Lin Maohua,Wan Meiqian,Zhou Lang

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science

Link

http://www.tandfonline.com/doi/pdf/10.1080/01495739.2014.985553

Reference10 articles.

1. A modified cooling process in directional solidification of multicrystalline silicon

2. Dislocations and Plastic Flow in the Diamond Structure

3. Dislocation dynamics in the plastic deformation of silicon crystals. II. Theoretical analysis of experimental results

4. The Constitutive Equation for Silicon and Its Use in Crystal Growth Modeling

5. Numerical analysis of cooling rate dependence on dislocation density in multicrystalline silicon for solar cells

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