A cryostat design for radiation damage experiments at low temperature-Reference-Cited by-同舟云学术

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A cryostat design for radiation damage experiments at low temperature

Published:1970-01 Issue:4 Volume:2 Page:287-289
ISSN:0033-7579
Container-title:Radiation Effects
language:en
Short-container-title:Radiation Effects

Author:

Bourgoin J.,Zizine J.,Squelard S.,Baruch P.

Publisher

Informa UK Limited

Subject

General Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00337576908243991

Reference7 articles.

1. Zizine, J. 1968.Radiation Effects in Semiconductors, Edited by: Vook, F. L. 186New York: Plenum Press Inc.

2. Magnetic field-induced structural reorientation in PrAlO3

3. Zizine, J. 1968.Effets des Rayonnements sur les Dispositifs à Semiconducteurs, A23Toulouse: Journées d'Electronique.

4. thesis;Peyrelongue J.,1968

5. Goldstein, B. to be published

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Defects in low temperature electron irradiated InP;Solid State Communications;1984-03

2. Annealing of electron-induced defects inn-type germanium;Physical Review B;1983-09-15

3. Thermally stimulated luminescence and conductivity in boron-doped diamonds;Physical Review B;1978-07-15

4. Hopping conduction in semiconducting diamond;Physical Review B;1978-02-15

5. Hopping-conductivity changes with the concentration of compensating centers;Physical Review B;1977-02-15

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