Theory of interacting donor electrons in the Anderson-localized regime of semiconductors

Author:

Takemori Tadashi,Kamimura Hiroshi

Publisher

Informa UK Limited

Subject

Condensed Matter Physics

Cited by 20 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Impurity Bands in Group-IV Semiconductors;Comprehensive Semiconductor Science and Technology;2011

2. Amorphous clusters I. Electronic structure of Si clusters with N, P and As dopants;Journal of Non-Crystalline Solids;1992-01

3. Hopping Conduction in the Critical Regime Approaching the Metal–Insulator Transition;Modern Problems in Condensed Matter Sciences;1991

4. Localized versus itinerant electrons at the metal-insulator transition in Si:P;Physical Review Letters;1989-08-07

5. The conduction band in non-crystalline semiconductors;Philosophical Magazine B;1988-10

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