High-performance extended-gate ion-sensitive field-effect transistors with multi-gate structure for transparent, flexible, and wearable biosensors
Author:
Affiliation:
1. Department of Electronic Materials Engineering, Kwangwoon University, Seoul, Republic of Korea
Funder
Korea Institute for Advancement of Technology
Publisher
Informa UK Limited
Subject
General Materials Science
Link
https://www.tandfonline.com/doi/pdf/10.1080/14686996.2020.1775477
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