NEXAFS study of electronic and atomic structure of active layer in Al/indium tin oxide/TiO2 stack during resistive switching-Reference-Cited by-同舟云学术

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NEXAFS study of electronic and atomic structure of active layer in Al/indium tin oxide/TiO2 stack during resistive switching

Published:2016-06-24 Issue:1 Volume:17 Page:274-284
ISSN:1468-6996
Container-title:Science and Technology of Advanced Materials
language:en
Short-container-title:Science and Technology of Advanced Materials

Author:

Filatova Elena¹,Konashuk Aleksei¹^ORCID,Petrov Yuri¹,Ubyivovk Evgeny¹,Sokolov Andrey²,Selivanov Andrei¹,Drozd Victor¹

Affiliation:

1. Institute of Physics, St Petersburg State University, Ul’yanovskaya Str. 1, Peterhof, 198504, St Petersburg, Russia

2. Institute Nanometre Optics and Technology (FG-INT), Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Albert Einstein Str. 15, 12489, Berlin, Germany

Funder

Helmholtz-Zentrum Berlin

Publisher

Informa UK Limited

Subject

General Materials Science

Link

https://www.tandfonline.com/doi/pdf/10.1080/14686996.2016.1182851

Reference60 articles.

1. Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3

2. Quantized conductance atomic switch

3. Nanoionics-based resistive switching memories

4. Resistive switching in transition metal oxides

5. Reversible colossal resistance switching in (La,Pr,Ca)MnO3: Cryogenic nonvolatile memories

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tuning the Band Gap in Titanium Dioxide Thin Films by Surfactant-Mediated Confinement and Patterning of Gold Nanoparticles;The Journal of Physical Chemistry C;2017-09-22

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