Temperature dependence of the quantum efficiency of radiative recombination in laser diodes†
Author:
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00207216808938021
Reference5 articles.
1. TEMPERATURE DEPENDENCE OF THRESHOLD CURRENT IN GaAs LASERS
2. Large Wavelength Changes with Cavity Q in Injection Lasers
3. Effect of higher absorption in non-lasing GaAs diodes at 300°K
4. The Radiative Band Pinch Effect and Temperature Dependence of Radiative Recombination in GaAs†
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ga1-xAlxAs - red light emitting diodes with high Si doping;Kristall und Technik;1973
2. Effect of increasing beam voltage on the internal quantum efficiency of spontaneous emission in electron-beam-excited p-type GaAs;International Journal of Electronics;1972-09
3. Temperature dependence of the internal quantum efficiency of spontaneous emission as a function of the beam voltage in electron-beam-excited p-type GaAs;Solid-State Electronics;1972-04
4. Temperature dependence of the internal quantum efficiency of spontaneous emission in p-type GaAs excited by a 30 kV electron beam;Physics Letters A;1971-08
5. Temperature dependence of the power output of the spontaneous emission from GaAs laser diodes†;International Journal of Electronics;1970-05
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