The Temperature Variation of the Parameters of Silicon Controlled Rectifiers†
Author:
Publisher
Informa UK Limited
Subject
Computer Science Applications,Control and Systems Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00207216408937694
Reference6 articles.
1. ALDRICH , R. W. , and HOLONYAK , N. , 1958 ,Proc. Inst. Radio Engrs, N.Y. , 46 , 1236 .
2. Current Gain in p-n-p-n Silicon Controlled Rectifiers†
3. The Design of a Silicon Controlled Rectifier Carrying Two Base Contacts
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Measurement of current gains of high and low power thyristors and their dependence upon current, temperature and gold-doping;International Journal of Electronics;1974-07
2. A review of the 'shorted emitter’ principle as applied to p—n—p—n silicon controlled rectifiers †;International Journal of Electronics;1971-12
3. Some Features of the Temperature Dependence of the Static Turn-On Current of Thyristors;Physics of p-n Junctions and Semiconductor Devices;1971
4. Physics at Brunel;Physics Bulletin;1967-05
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